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2n3054 - pdf download

2N3054
2N3054A
SILICON
NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A
devices are silicon NPN power transistors manufactured
by the epitaxial base process, mounted in a hermetically
sealed metal case, designed for general purpose
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
SYMBOL
VCBO
VCEV
90
UNITS
V
90
V
VCER
VCEO
60
V
55
V
VEBO
IC
7.0
V
4.0
A
IB
PD
2.0
A
25
W
PD
TJ, Tstg
75
W
-65 to +200
°C
Thermal Resistance (2N3054)
JC
7.0
°C/W
Thermal Resistance (2N3054A)
JC
2.33
°C/W
MAX
1.0
UNITS
mA
6.0
mA
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation (2N3054)
Power Dissipation (2N3054A)
Operating and Storage Junction Temperature
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICEV
VCE=90V, VEB=1.5V
ICEV
VCE=90V, VEB=1.5V, TC=150°C
ICEO
IEBO
VCE=30V
VEB=7.0V
BVCEO
BVCER
IC=100mA
IC=100mA, RBE=100Ω
VCE(SAT)
VCE(SAT)
VBE(ON)
IC=500mA, IB=50mA
IC=3.0A, IB=1.0A
VCE=4.0V, IC=500mA
hFE
VCE=4.0V, IC=500mA
VCE=4.0V, IC=3.0A
5.0
fT
VCE=4.0V, IC=100mA, f=1.0kHz
VCE=10V, IC=200mA, f=1.0MHz
3.0